Glass passivated high power semiconductor devices

Details Glass passivated high power semiconductor devices Glass passivated high power semiconductor devices

H - Electricity

01

L

356/168

H01L 21/302 (2006.01) H01L 21/56 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1177975

49,120 ABSTRACT OF THE DISCLOSURE The present invention is directed to a process for producing a glass passivated semiconductor device and to the device so produced. The process comprises forming at least one region having a second type of conductivity in a large area body of semiconductor material having a first type of conductivity, forming grooves through top and bottom surfaces of the large area body whereby a plurality of smaller area bodies are defined. The grooves are filled with a glass paste which is solidified in situ and the smaller bodies are cut from the larger body with a laser scribe. Each smaller body cut from the larger body includes the glass filled groove which defined it origin- ally. Electrodes are then affixed to each of the smaller bodies thereby providing a semiconductor device.

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