H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/168
H01L 21/302 (2006.01) H01L 21/56 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01) H01L 29/06 (2006.01)
Patent
CA 1177975
49,120 ABSTRACT OF THE DISCLOSURE The present invention is directed to a process for producing a glass passivated semiconductor device and to the device so produced. The process comprises forming at least one region having a second type of conductivity in a large area body of semiconductor material having a first type of conductivity, forming grooves through top and bottom surfaces of the large area body whereby a plurality of smaller area bodies are defined. The grooves are filled with a glass paste which is solidified in situ and the smaller bodies are cut from the larger body with a laser scribe. Each smaller body cut from the larger body includes the glass filled groove which defined it origin- ally. Electrodes are then affixed to each of the smaller bodies thereby providing a semiconductor device.
381463
Johnson Joseph E.
Ostop John A.
Oldham And Company
Westinghouse Electric Corporation
LandOfFree
Glass passivated high power semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Glass passivated high power semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Glass passivated high power semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1268267