Glass passivated junction semiconductor devices

Details Glass passivated junction semiconductor devices Glass passivated junction semiconductor devices

H - Electricity

01

L

356/171

H01L 27/04 (2006.01) H01L 21/329 (2006.01) H01L 21/56 (2006.01) H01L 23/31 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1075830

W.E. 47 ,154 ABSTRACT This invention is directed to a semiconductor devise comprised of a body of semiconductor material having at least one p-n junction terminating at an exposed surface of the body. The p-n junction is passivated at its termination point by a first, thin glass layer and a second glass layer disposed over the first thin glass layer. The second glass layer is thicker than the first glass layer and includes a predetermined amount of a suitable filler material.

278523

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