Glow discharge deposition of films from disilane or...

Details Glow discharge deposition of films from disilane or... Glow discharge deposition of films from disilane or...

C - Chemistry, Metallurgy

23

C

356/182, 204/96.

C23C 16/06 (2006.01) C23C 16/24 (2006.01) C23C 16/32 (2006.01) C23C 16/34 (2006.01) C23C 16/40 (2006.01) H01L 21/205 (2006.01) H01L 21/314 (2006.01) H01L 21/316 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1160179

Abstract Disilane (Si2H6), trisilane (Si3H8) or a higher order silane is applied in a glow discharge process to rapid- ly and efficiently form a film of hydrogenated amorphous silicon on a substrate. An inductively coupled RF glow discharge apparatus, a capacitively coupled glow dis- charge apparatus or a DC glow discharge apparatus may be employed to deposit the amorphous silicon on a conducting or non-conducting substrate. The disilane or higher or- der silanes may also be combined in a glow discharge process with gases which contain elements such as nitro- gen or oxygen to rapidly deposit corresponding compound films. Y0979-068

362154

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