Gradient doping in amorphous silicon

Details Gradient doping in amorphous silicon Gradient doping in amorphous silicon

H - Electricity

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356/182, 345/26

H01L 21/363 (2006.01) H01L 21/203 (2006.01) H01L 31/0376 (2006.01) H01L 31/07 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1148669

GRADIENT DOPING IN AMORPOUS SILICON ABSTRACT A method for producing a gradient doping profile in amorphous silicon comprising providing a substrate, coating said substrate with a layer of dopant material selected from the group consisting of antimony, phosphorous, aluminum, lithium, arsenic or a mixture thereof; sputter deposting a layer of photoconductive amorphous silicon while concurrently heating and applying a positive bias voltage to said dopant layer, where during said deposition the dopant material diffuses into the amorphous silicon layer under the combined driving forces of the applied bias voltage and the elevated temperature.

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