Graft base bipolar transistor

Details Graft base bipolar transistor Graft base bipolar transistor

H - Electricity

01

L

356/162

H01L 29/73 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1307357

ABSTRACT OF THE DISCLOSURE A so-called graft-base transistor is disclosed. The transistor is formed in an island shaped region surrounded by an insulating isolation region formed in an epitaxially grown semiconductor layer on a silicon substrate. A graft base region having higher impurity concentration is formed in the island-shaped region remote from the isolation region. A surface portion of the island shaped region between the isolation region and the graft base region is entirely depleted during operation.

562891

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