Green light emitting gap diode and production method for same

Details Green light emitting gap diode and production method for same Green light emitting gap diode and production method for same

H - Electricity

01

L

345/52

H01L 21/208 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1054245

ABSTRACT OF THE DISCLOSURE: The invention relates to a method of producing and to a green light emitting electroluminescent diode. The diode comprises a p-n junction formed in a gallium phosphide crystal. Both the p-layer and n-layer of the diode are epitaxially grown from liquid phase and are doped with nitrogen as the trapping center. The p-layer is also doped with zinc, the latter being in a concentra- tion such that an excess concentration of the acceptor over the concentration of the donor in the p-layer in the neighbourhood of the p n junction is in the range between 1.5 x 1018 cm-3 and 3 5 1018 cm-3.

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