Group iii nitride based fets and hemts with reduced trapping...

Details Group iii nitride based fets and hemts with reduced trapping... Group iii nitride based fets and hemts with reduced trapping...

H - Electricity

01

L

H01L 29/778 (2006.01) H01L 21/335 (2006.01) H01L 21/338 (2006.01) H01L 23/29 (2006.01) H01L 29/06 (2006.01) H01L 29/20 (2006.01)

Patent

CA 2399547

New Group III nitride based field effect transistors (10) and high electron mobility transistors (30) are disclosed that provide enhanced high frequency response characteristics. The preferred transistors (10, 30) are made from GaN/AlGaN and have a dielectric layer (22, 44) on the surface of their barrier layer (18, 38). The dielectric layer (22, 44) has a high percentage of donor electrons (68) that neutralize traps (69) in the barrier layer (18, 38) such that the traps (69) cannot slow the high frequency response of the transistors (10, 30). A new method of manufacturing the transistors (10, 30) is also disclosed, with the new method using sputtering to deposit the dielectric layer (18, 38).

L'invention porte sur de nouveaux transistors à effet de champ (10) du groupe III à base de nitrure, et sur des transistors (30) à électrons à forte mobilité présentant des caractéristiques améliorées de réponse aux hautes fréquences. Les transistors (10, 30) préférés sont en GaN/AlGaN et comportent une couche diélectrique (22, 44) à la surface de leur couche d'arrêt (18, 38). La couche diélectrique (22, 44) présente un fort pourcentage d'électrons donneurs (68) qui neutralisent les pièges (69) de la couche d'arrêt (18, 38) qui ainsi ne peuvent ralentir la réponse aux hautes fréquences des transistors (10, 30). L'invention porte également sur un nouveau procédé de fabrication des transistors (10, 30) effectuant le dépôt de la couche diélectrique (18, 38) par pulvérisation cathodique.

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