Group iii nitride based quantum well light emitting device...

Details Group iii nitride based quantum well light emitting device... Group iii nitride based quantum well light emitting device...

H - Electricity

01

L

H01L 33/06 (2010.01)

Patent

CA 2567739

Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

Dispositifs électroluminescents à base de nitrure du groupe III et procédés de fabrication desdits dispositifs. Ces dispositifs électroluminescents comportent une couche de nitrure du groupe III de type n, une région active à base de nitrure du groupe III située sur la couche de nitrure du groupe III de type n et pourvue d'au moins une structure de puits quantique, une couche de nitrure du groupe III contenant de l'indium sur la région active, une couche de nitrure du groupe III de type p contenant de l'aluminium sur la couche de nitrure du groupe III contenant de l'indium, un premier contact sur la couche de nitrure du groupe III de type n et un second contact sur la couche de nitrure du groupe III de type p. La couche de nitrure du groupe III contenant de l'indium peut également contenir de l'aluminium.

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