Group iii nitride led with undoped cladding layer

H - Electricity – 01 – L

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H01L 33/00 (2006.01)

Patent

CA 2434675

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer (13) positioned between a first n-type Group III nitride cladding layer (11) and a second n-type Group III nitride cladding layer (12), the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p- type Group III nitride layer (18), which is positioned in the semiconductor structure such that the second n-type cladding layer (12) is between the p- type layer (18) and the active layer (13).

La présente invention concerne une structure à semi-conducteur pour dispositifs lumineux pouvant émettre dans la région rouge à ultraviolet du spectre électromagnétique. La structure à semi-conducteur comprend une couche active en nitrure de groupe III (13) disposée entre une première couche de revêtement en nitrure de groupe III de type n (11) et une deuxième couche de revêtement en nitrure de groupe II de type n (12), les bandes interdites respectives des première et seconde couches de revêtement de type n étant plus grandes que la bande interdite de la couche active. Par ailleurs, cette structure à semi-conducteur comprend une couche en nitrure de groupe III de type p (18) disposée dans de telle sorte que la deuxième couche de revêtement de type p (12) se trouve entre la couche de type p (18) et la couche active (13).

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