H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/00 (2006.01)
Patent
CA 2487149
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of Al~xIn~yGa~1- x-yN, where 0<=x<= 1 and 0<= y < 1 and (x+y)<= 1; a second n-type cladding layer of Al~xIn~yGa~1-x-yN, where 0<= x<= 1 and 0<= y <1 and (x + y)<= 1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of In~xGa~1-xN well layer where 0 < x < 1 separated by a corresponding plurality of Al~xIn~yGa~1-x-yN barrier layers where 0 <= x <= 1 and 0<= y<=1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers. In preferred embodiments, a Group III nitride superlattice supports the multiple quantum well.
La pr~sente invention concerne une structure de semi-conducteur destin~e ~ des dispositifs d'~mission de lumire pouvant ~mettre dans la partie rouge ~ ultraviolet du spectre ~lectromagn~tique. Cette structure comprend une premire couche de m~tallisation de type n d'Al´x?In´y?Ga´1-x-y?N, oÕ 0 <= x <= 1, 0 <= y < 1 et (x + y) <= 1, une seconde couche de m~tallisation de type n d'Al´x?In´y?Ga´1-x-y?N, oÕ 0 <= x <= 1, 0 <= y < 1 et (x + y) <= 1, cette seconde couche de m~tallisation ~tant ~galement caract~ris~e par l'absence quasi totale de magn~sium, une partie active situ~e entre lesdites premire et seconde couches de m~tallisation sous la forme d'un multipuits quantique comportant une pluralit~ de couches de puits d'In´x?Ga´1-x?N, oÕ 0 < x < 1, s~par~es par une pluralit~ correspondante de couches barrires d'Al´x?In´y?Ga´1-x-y?N, oÕ 0 <= x <= 1 et 0 <= y <= 1, ainsi qu'une couche de type p d'un nitrure du groupe III, la seconde couche de m~tallisation de type n ~tant situ~e entre la couche de type p et le multipuits quantique, lesdites premire et seconde couches de m~tallisation de type n poss~dant des bandes interdites respectives plus larges que la bande interdite des couches de puits. Dans des modes de r~alisation pr~f~r~s, un super-r~seau de nitrure du groupe III supporte le multipuits quantique.
Bergmann Michael John
Doverspike Kathleen Marie
Edmond John Adam
Emerson Todd David
Kong Hua-Shuang
Cree Inc.
Sim & Mcburney
LandOfFree
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