Group iii nitride light emitting devices with gallium-free...

H - Electricity – 01 – L

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H01L 33/00 (2006.01)

Patent

CA 2426718

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

La présente invention est une structure semi-conductrice pour dispositifs électroluminescents pouvant émettre dans la zone du spectre électromagnétique allant du rouge à l'ultraviolet. La structure semi-conductrice comprend une première couche de métallisation d'un nitrure du groupe III, une seconde couche de métallisation d'un nitrure du groupe III, et une couche active d'un nitrure du groupe III qui est placée entre la première et la seconde couche, et dont la largeur de bande est inférieure aux largeurs de bande respectives de la première et de la seconde couche de métallisation. La structure semi-conductrice est caractérisée par l'absence de gallium dans une ou plusieurs de ces couches structurales.

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