Group iii nitride photonic devices on silicon carbide...

Details Group iii nitride photonic devices on silicon carbide... Group iii nitride photonic devices on silicon carbide...

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2493503

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

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