Group iii-v nitride semiconductor growth method and vapor...

Details Group iii-v nitride semiconductor growth method and vapor... Group iii-v nitride semiconductor growth method and vapor...

C - Chemistry, Metallurgy

30

B

C30B 29/38 (2006.01) C30B 25/10 (2006.01)

Patent

CA 2313155

A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein for containing a group III element and an inlet 7 for introducing nitrogen; excitation means 15 for plasma-exciting nitrogen introduced from the inlet 7; and heating means 13 for heating a seed crystal 10 disposed within the reaction ampoule 3 and the container 11; wherein, upon growing the group III-V nitride semiconductor on the seed crystal 10, nitrogen is introduced from the inlet 7, and no gas is let out from within the reaction ampoule 3.

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