Group iii-v semiconductor electrical contact

Details Group iii-v semiconductor electrical contact Group iii-v semiconductor electrical contact

H - Electricity

01

L

356/148

H01L 21/285 (2006.01) H01L 27/04 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1247754

GROUP III-V SEMICONDUCTOR ELECTRICAL CONTACT Abstract of the Disclosure A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.

502699

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