Growing epitaxial films when the misfit between film and...

Details Growing epitaxial films when the misfit between film and... Growing epitaxial films when the misfit between film and...

H - Electricity

01

L

148/2.4

H01L 21/205 (2006.01) C30B 23/02 (2006.01)

Patent

CA 1112986

GROWING EPITAXIAL FILMS WHEN THE MISFIT BETWEEN FILM AND SUBSTRATE IS LARGE Abstract of the Disclosure A method is described for reducing the defect density in a crys- talline film grown on a substrate with which it has a substantial mis- fit. The principle of the method is to grow the film, not directly from the substrate, but from a layer of small islands previously de- posited onto the substrate. The technique has been fully investigated for the growth of Ag (and thence Au) films on NaCl, a substantial im- provement in the quality of the overgrown film being obtained when an intermediate layer of Ni islands is deposited on the NaCl prior to the deposition of the Ag. It has been demonstrated that it is important for the intermediate islands to be a) generally epitaxially aligned with the substrate, even if as a result of their misfit with the substrate, they are partially incoherent; b) weakly bonded to the substrate so that they can move on this substrate during the deposition of the upper layer upon them; c) approximately hemispherical and small so that elastic strains in the overgrown layer decay rapidly with distance from the island and so that the preferred adatom site density is large on the islands compared with the substrate despite a relatively low coverage of islands on the substrate of about 10%; d) be of intermediate misfit with the substrate compared with the crystal layer to be overgrown.

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