Growing silicon ingots

Details Growing silicon ingots Growing silicon ingots

C - Chemistry, Metallurgy

30

B

148/1.5

C30B 15/36 (2006.01) C30B 11/00 (2006.01)

Patent

CA 1193522

ABSTRACT OF THE DISCLOSURE The production of silicon ingots of substantially single crystallinity from metallurgical grade silicon by heating it in a crucible to above its melt- ing point to melt it and then extracting heat from the bottom of the crucible with a heat exchanger in heat conducting relationship with the bottom, said metallurgical grade silicon having an impurity level greater than 100 ppm, this level being greater than silicon melt stocks previously used.

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