C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1.2
C30B 9/00 (2006.01) C30B 11/00 (2006.01) C30B 17/00 (2006.01) C30B 27/00 (2006.01)
Patent
CA 1038268
ABSTRACT Process for growing single crystals, including the steps of placing material in a crucible, heating the crucible to above the melting point of the material to melt it, and thereafter solidifying the melted material by extracting heat from a bottom portion of the crucible, wherein the tempera- ture of at least those portions of the side walls of the crucible that are in contact with the material within the crucible are maintained above the melting point of the material and simultaneously the temperature of said bottom portion is reduced below the melting point of the material, until substantially all the material within the crucible has solidified. In a modified form of the process, a seed crystal is placed in the crucible initially. Process is useful for growing single crystals of many materials, such as ceramics, metals and composite materials, typically sapphire, ruby, spinels, eutectics and gallium phosphide.
216766
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