Growth and operation of a step-graded ternary iii-v...

Details Growth and operation of a step-graded ternary iii-v... Growth and operation of a step-graded ternary iii-v...

H - Electricity

01

L

345/27

H01L 27/14 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1059230

GROWTH AND OPERATION OF A STEP-GRADED TERNARY III-V HETEROJUNCTION P-N DIODE PHOTODETECTOR Abstract of the Disclosure In an infrared photodetection apparatus a photo- detector diode is used which comprises a heterojunction of two epitaxial layers of differing compositions of a ternary III-V semiconductive alloy, such that the outer layer will serve as a radiation-admitting window as well as physical protection for the underlying absorbing layer in the so- called direct photodetector diode configuration. The ternary alloy illustratively includes two metallic group III elements such as indium and gallium; but the principle can be extended to ternary alloys including two group V elements, such as arsenic and antimony. Further, quaternary alloys of III-V elements can be employed. The absorbing layer is selected to be substantially intrinsic. The latter is the case for an n-type layer of InxGa(1-x)As. Matching of this absorbing layer to a gallium arsenide substrate is achieved by a plurality of step-graded composi- tion layers of indium gallium arsenide. - 1 -

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