Growth of colorless silicon carbide crystals

Details Growth of colorless silicon carbide crystals Growth of colorless silicon carbide crystals

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C30B 23/00 (2006.01)

Patent

CA 2244262

Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.

L'invention concerne de grands cristaux uniques de carbure de silicium qui sont tirés dans le four d'un système de sublimation. Les cristaux sont tirés avec des niveaux de compensation de dopants de type p et de type n (c.-à-d. des niveaux à peu près égaux de deux dopants) afin de produire un cristal essentiellement incolore. Le cristal peut être découpé et façonné sous forme de pierres précieuses synthétiques présentant une résistance et une dureté extraordinaires, et une brillance équivalente ou supérieure à celle du diamant.

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