Growth of gan on sapphire with mse grown buffer layer

Details Growth of gan on sapphire with mse grown buffer layer Growth of gan on sapphire with mse grown buffer layer

C - Chemistry, Metallurgy

30

B

148/2.4, 148/3.8

C30B 29/38 (2006.01) C30B 23/02 (2006.01) C30B 25/06 (2006.01) C30B 25/18 (2006.01) C30B 30/04 (2006.01)

Patent

CA 2284475

A method of fabricating a gallium nitride or like epilayer on sapphire is disclosed wherein a buffer layer is grown on the sapphire substrate by magnetron sputter epitaxy (MSE); and then the gallium nitride epilayer is formed on the buffer layer, preferably by molecular beam epitaxy.

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