Growth of iii-v layers containing arsenic, antimony and...

Details Growth of iii-v layers containing arsenic, antimony and... Growth of iii-v layers containing arsenic, antimony and...

C - Chemistry, Metallurgy

30

B

345/27, 148/2.55

C30B 29/00 (2006.01) C30B 19/10 (2006.01) H01L 21/208 (2006.01) H01L 31/108 (2006.01) H01L 31/109 (2006.01) H01L 33/00 (2006.01) H04B 10/18 (2006.01) H04B 10/28 (2006.01)

Patent

CA 1092006

ABSTRACT OF THE DISCLOSURE Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epit??xy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.

273697

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