Growth of oriented single crystal semiconductor on insulator

Details Growth of oriented single crystal semiconductor on insulator Growth of oriented single crystal semiconductor on insulator

C - Chemistry, Metallurgy

30

B

148/1

C30B 13/16 (2006.01) H01L 21/20 (2006.01) H01L 21/324 (2006.01) H01L 21/36 (2006.01)

Patent

CA 1225571

Abstract of the Disclosure Improvements in the lateral recrystallization of semiconductor material on buried insulator are disclosed. In particular, in the zone-melting process applied to seeded Si, it is found that scanning the molten zone in a (110) direction can result in substantially subboundary- free recrystallized material. Furthermore, appropriate patterning of the capping layer, to provide means for accommodating the volume change attending solidification of the semiconductor material, can result in significant decrease of defect density in laterally recrystallized semiconductor material on insulator. Especially advantageous results are produced when combining the improvements.

460107

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