H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178, 356/192
H01L 21/18 (2006.01) C23C 14/02 (2006.01) C23C 16/00 (2006.01) C30B 11/12 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01)
Patent
CA 1088677
GROWTH OF POLYCRYSTALLINE SEMICONDUCTOR FILM WITH INTERMETALLIC NUCLEATING LAYER Abstract of the Disclosure A method is disclosed for fabricating a thin elemental semiconductor, e.g., Si or Ge, film with columnar grains in a filamentary structure, by the use of an intermetallic compound incorporating the elemental semiconductor to form a nucleating layer for the growth of the semiconducting film. The semiconductor is grown from vapor phase by the technique of either vacuum evaporation or chemical vapor deposition, e.g., by decomposition of SiH4. The semiconductor e.g., Si, is initially deposited onto a thin film of a specific metal, e.g., Pt or Ni, on any inert substrate, e.g., SiO2 or Al2O3, which is held at a temperature, e.g., 900°C, above the eutectic point, i.e., 830°C, of an intermetallic compound and the metallic film, and below the eutectic point, i.e., 979°C, of another intermetallic compound and the semiconductor. Deposition of the semiconductor onto the metallic film produces a layer of liquid comprising the semiconductor and metal, which increases in thickness until the metallic layer is completely consumed. Additional deposition of the semiconductor produces a supersaturated liquid from which large crystallites of the intermetallic precipitate. With increasing deposition of semiconductor, the crystallites of intermetallic material continue to grow until they consume all of the metal in the liquid, at which point no liquid remains. Continuing deposition of semiconductor material results in the growth of filamentary crystallites of the semiconductor out of the intermetallic surface. The result is a columnar film of the semiconductor with a filamentary structure originating from the crystallites of intermetallic nucleating material.
292874
Cuomo Jerome J.
Distefano Thomas H.
Rosenberg Robert
International Business Machines Corporation
Na
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