C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.55
C30B 29/40 (2006.01) C30B 19/04 (2006.01) H01L 21/00 (2006.01) H01L 21/208 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1313107
Abstract of the Disclosure In a method for Liquid Phase Epitaxy (LPE) of semi- insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperatures below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers. - i -
568369
Benyon William
Knight D. Gordon
Bookham Technology Plc
Mbm Intellectual Property Law Llp
LandOfFree
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