Growth of semiconductors

Details Growth of semiconductors Growth of semiconductors

H - Electricity

01

L

356/178, 345/33

H01L 21/205 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01) H01L 21/20 (2006.01) H01S 5/12 (2006.01) H01S 5/323 (2006.01)

Patent

CA 1236554

ABSTRACT A gas mixture containing phosphine and R1R2R3 In x R4R5R6 or R1R2 In x R4R5 where the Rs are alkyl groups is passed over a semiconductor substrate comprising indium and phosphorus so as to deposit a semiconductor material comprising indium and phosphorus, and the exposure of the substrate to phosphine is controlled to avoid or reduce transport of the substrate material. Thus, for example, indium phosphide may be grown onto corrugations in gallium indium arsenide phosphide, the corrugations being undeformed during this growth. Such a growth step may be used in the production of distributed feedback semiconductor lasers operating near 1.55 nm

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