Growth of structures based on group iv semiconductor materials

Details Growth of structures based on group iv semiconductor materials Growth of structures based on group iv semiconductor materials

H - Electricity

01

L

148/3.5

H01L 21/20 (2006.01) C30B 1/02 (2006.01) C30B 13/00 (2006.01) C30B 13/34 (2006.01)

Patent

CA 1204044

- 20 - GROWTH OF STRUCTURES BASED ON GROUP IV SEMICONDUCTOR MATERIALS Abstract of the Disclosure Single crystal layers of Group IV semiconductor materials, such as silicon, are grown on insulating substrates. The fabrication of this structure is achieved by forming on a single crystal substrate a layer of an insulating material, such as silicon oxide. A small via hole is produced in the insulating layer to leave a portion of the underlying substrate uncovered, A precursor material is deposited on the insulating layer so that it covers at least a portion of the insulating layer and also contacts the substrate at the via hole. The precursor layer is then formed into a single crystal by inducing growth on the substrate at the via hole and propagating this growth through the precursor layer.

395191

Affiliated with

Also associated with

Rating

Growth of structures based on group iv semiconductor materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Growth of structures based on group iv semiconductor materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of structures based on group iv semiconductor materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1296186