Growth technique for preparing graded gap semiconductors and...

Details Growth technique for preparing graded gap semiconductors and... Growth technique for preparing graded gap semiconductors and...

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345/23, 345/50,

H01L 31/04 (2006.01) C30B 23/00 (2006.01) C30B 23/04 (2006.01) H01L 31/032 (2006.01) H01L 31/065 (2006.01)

Patent

CA 1152622

ABSTRACT A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pbl-wCdwla[S]l-a wherein ".omega." varied between zero and fifteen hundredths, inclusive, and a=0.55 + 0.003), deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During pre- paration, the temperature of the substrate is varied, thereby providing An epilayer with graded composition and pre-determined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

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