C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.1
C23C 14/16 (2006.01) C23C 14/00 (2006.01)
Patent
CA 1235385
ABSTRACT sputtering process for preparing amorphous semiconduting films having a reduced number of localized states is disclosed. In particular, hydrogenated films free of polyhydrides may be prepared according to the inventive process. In one application of the process, a silicon target is bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target and by passivating ions of a substance effective in passivating localized states in amorphous semiconducting films, such as hydrogen ions. The products of this sputtering are collected on remotely located substrates to form passivated amorphous films. films produced according to the process may be doped and junction structures formed during deposition by adding ions of a gaseous dopant to the beam of passivating ions. In a preferred application, amorphous, hydrogenated silicon films contain hydrogen only in the form of silicon monohydride.
452105
Battelle Development Corporation
Fetherstonhaugh & Co.
LandOfFree
Hard layer formed by incorporating nitrogen into mo or w... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hard layer formed by incorporating nitrogen into mo or w..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hard layer formed by incorporating nitrogen into mo or w... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1203920