Hard mask structure for patterning of materials

Details Hard mask structure for patterning of materials Hard mask structure for patterning of materials

H - Electricity

01

L

H01L 21/302 (2006.01) H01L 21/461 (2006.01)

Patent

CA 2614373

Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

L'invention se rapporte à des techniques de fabrication de dispositif magnétique. Dans un aspect, un procédé de formation de motifs sur au moins un matériau non volatile par exemple, consiste à former une structure de masque dur sur au moins une surface du matériau à graver. La structure de masque dur est configurée pour avoir une base située à proximité du matériau et un sommet opposé à la base. La base a au moins une dimension latérale plus importante qu'au moins une dimension latérale du sommet de la structure de masque dur, de sorte qu'au moins une partie de la base s'étende latéralement à l'extérieur par rapport à une distance latérale sensible en dehors du sommet. Le sommet de la structure de masque dur est situé à une distance verticale plus importante du matériau gravé que la base. On grave le matériau.

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