Heterojunction avalanche diode with a ternary alloy of...

Details Heterojunction avalanche diode with a ternary alloy of... Heterojunction avalanche diode with a ternary alloy of...

Category

H - Electricity

Subcategory

01

Subsubcategory

L

CPC

356/53, 356/69,

IPC codes

H01L 29/864 (2006.01) H01L 29/205 (2006.01)

Type

Patent

Patent number

CA 1104265

Description

ABSTRACT OF THE DISCLOSURE: An avalanche diode comprising a semiconducting heterojunction (GaxIn1-xAs/InP) intended to oscillate as an " IMPATT" diode. It comprises a substrate of n+ doped monocrystalline InP supporting a series of three layers which are formed by epitaxy and of which the monocrystalline lat- tices match one another namely an InP layer with n-type doping and two layers of GaxIn1-xAs (best mode: Ga0.47 In0.53As) with n-type and p+-type doping respectively, these two layers being of minimal thickness. When a backward bias is applied to the p+n-junction, the avalanche phenomenon takes place in the thin n-type layer of ternary alloy.

Application Number

308516

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