Heterojunction avalanche photodiode

Details Heterojunction avalanche photodiode Heterojunction avalanche photodiode

H - Electricity

01

L

345/24

H01L 31/02 (2006.01) H01L 31/0352 (2006.01) H01L 31/107 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1244121

ABSTRACT There is disclosed an avalanche photodiode having a first semi- conductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type adjacent to said first semiconductor layer wherein electrons or holes, whichever have the greater ionization rate, constitute the minority carrier; a third semiconductor layer of the second conductivity type, having a smaller bandgap than the second, wherein electrons or holes, whichever have the greater ionization rate, constitute the majority carrier; and a multi-heterojunction structure positioned between said second and third semiconductor layers and comprising, alternately laid one over the other, fourth semiconductor layers of the second conductivity type and having a bandgap not smaller than that of the second, and fifth semiconductor layers having a bandgap not smaller than that of the third semiconductor layer but not larger than that of the second semiconductor layer.

458281

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