Heterojunction bipolar transistor and the manufacturing...

Details Heterojunction bipolar transistor and the manufacturing... Heterojunction bipolar transistor and the manufacturing...

H - Electricity

01

L

356/124

H01L 29/72 (2006.01) H01L 27/06 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1315017

ABSTRACT OF THE DISCLOSURE A heterojunction bipolar transistor comprises an external base region, an emitter region, a collector region, said external base region contacting with said emitter region at their side surfaces, and an intrinsic base region formed on a region including a boundary between said emitter region and said external base region, wherein said collector or emitter region is formed on said intrinsic base region.

565494

Affiliated with

Also associated with

Rating

Heterojunction bipolar transistor and the manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction bipolar transistor and the manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction bipolar transistor and the manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1207090