Heterojunction bipolar transistor with collector buffer layer

Details Heterojunction bipolar transistor with collector buffer layer Heterojunction bipolar transistor with collector buffer layer

H - Electricity

01

L

356/161

H01L 29/73 (2006.01) H01L 29/08 (2006.01) H01L 29/36 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1299771

Abstract of the Disclosure A heterojunction bipolar transistor includes an emitter layer of a first conductivity type, a base layer of a second conductivity type adjacent to the emitter layer, a collector buffer layer of the first conductivity type, and a collector layer arranged between the collector buffer layer and the base layer. The collector layer includes a first collector layer formed at the side of the base layer and a second collector layer arranged at the side of the collector buffer layer. The first collector layer is a semiconductor layer having an impurity concentration lower than that of the base layer. The second collector layer is a semiconductor layer of the second conductivity type having an impurity concentration higher than that of the first collector layer.

558076

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