Heterojunction bipolar transistors

H - Electricity – 01 – L

Patent

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356/163

H01L 29/70 (2006.01) H01L 21/28 (2006.01) H01L 21/331 (2006.01) H01L 29/08 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1286800

Abstract of the Disclosure Heterojunction bipolar transistor technology employing in a body wherein a larger area base electrode over a buried electrode has above it a smaller area electrode, an overhang capability on the portion of the smaller area electrode that operates to mask the base layer in converting the extrinsic portion to high conductivity and assists lift-off of base contact metal such that the base contact metal is in extremely close proximity to the smaller area electrode.

602548

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