Heterojunction p-i-n photovoltaic cell

Details Heterojunction p-i-n photovoltaic cell Heterojunction p-i-n photovoltaic cell

H - Electricity

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H01L 31/06 (2006.01) H01L 31/072 (2006.01) H01L 31/075 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1299715

HETEROJUNCTION P-I-N PHOTOVOLTAIC CELL ABSTRACT OF THE DISCLOSURE A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as a n absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.

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