Heterojunction photodiode of the avalanche type

Details Heterojunction photodiode of the avalanche type Heterojunction photodiode of the avalanche type

H - Electricity

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H01L 31/00 (2006.01) H01L 31/107 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1121038

A HETEROJUNCTION PHOTODIODE OF THE AVALANCHE TYPE Abstract of the Disclosure A photodiode comprising a first layer of a relatively large forbidden band (e.g. 1.4 eV) in a p type of conduc- tivity, wherein photons can be absorbed, thus creating pairs of electron-holes diffusing towards a second layer, said second layer having a forbidden band (0.7 eV) that is approximately half of the first band. In that second layer of an n-type of conductivity each electron falls and creates by impact ionization a new pair electron-hole, thus producing an avalanche gain of 2. The phenomenon occurs theoretically with a zero bias voltage. In practice the photodiode operates with a bias voltage near zero. The two materials of the heterojunction are for instance In P (for- bidden band : 1.4 eV) and Ga0.47 In0.53 As (0.7 eV) providing crystalline networks perfectly matched.

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