Heterojunction phototransistor constructed in planar technology

Details Heterojunction phototransistor constructed in planar technology Heterojunction phototransistor constructed in planar technology

H - Electricity

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H01L 31/00 (2006.01) H01L 31/11 (2006.01)

Patent

CA 1168743

A HETEROJUNCTION PHOTOTRANSISTOR CONSTRUCTED IN PLANAR TECHNOLOGY AND A METHOD OF FABRICATION OF A PHOTOTRANSISTOR OF THIS TYPE Abstract of the Disclosure A phototransistor in planar technology for optical fiber communications permiting an easy formation of the contact connection of the transistor base located within the intermediate layer of an npn stack as well as accurate localization of the pn junction. To this end, the upper semiconductor layer initially receives a first diffusion of doping impurity in a first region which penetrates into the lower layer to a slight extent and forms the base region. An impurity of opposite type is then implanted in a second region which is located within the first and forms the emitter region whilst the substrate constitutes the: collector. The base and emitter connections are formed on the free face whilst the collector is connected on the substrate side. -1-

389743

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