Heterojunction semiconductor device

Details Heterojunction semiconductor device Heterojunction semiconductor device

H - Electricity

01

L

356/149, 356/180

H01L 29/205 (2006.01) H01L 29/72 (2006.01) H01L 29/737 (2006.01) H01L 29/778 (2006.01) H01L 29/80 (2006.01) H01L 29/86 (2006.01)

Patent

CA 1215181

HETEROJUNCTION SEMICONDUCTOR DEVICE Abstract of the Disclosure: In the present invention, a semiconductor device has the structure using heterojunction between InP and AlxIn1-xAs (x?0.48). This structure has solved the problem in the GaAs/AlGaAs heretofore used as a high speed device, that is the intervalley transition accompanying negative differential mobility in fields higher than approximately 3 KV/cm and has accomplished a semiconductor device in which operating speed is high and operating voltage can be increased.

461967

Affiliated with

Also associated with

Rating

Heterojunction semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1281937