High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

H - Electricity

01

L

356/184

H01L 21/38 (2006.01) H01L 21/033 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1242533

HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE Abstract of the Disclosure A multiple-zone junction termination exten- sion region is formed adjacent a reverse-blocking junction in a semiconductor device to increase the breakdown voltage of such device. A single mask is used to form the multiple-zone JTE region, with the mask having different patterns of openings in the different zones of the mask. Adjacent openings are maintained with a center-to-center spacing of less than 25 percent of the depletion width of the reverse- blocking junction in a voltage-supporting semiconductor layer adjoining the reverse-blocking junction at the ideal breakdown voltage of the junction. As a conse- quence, the resulting non-uniformities in doping of the various zones of the JTE region are negligibly small An alternative JTE region is finely-graduated in dopant level from one end of the region to the other, as opposed to having multiple zones of discrete doping levels.

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