High capacity etching apparatus

Details High capacity etching apparatus High capacity etching apparatus

C - Chemistry, Metallurgy

23

C

204/167, 204/96.

C23C 15/00 (1980.01)

Patent

CA 1144891

Maydan-l6 23. HIGH CAPACITY ETCHING APPARATUS Abstract of the disclosure An apparatus for high-throughput sputter etching or reactive sputter etching of wafers comprises a multi- faceted wafer holder centrally disposed within a cylindrical chamber. A source of r-f power is capacitively coupled to the holder and the cylindrical chamber is grounded. By establishing a suitable plasma within the chamber, simultaneous anisotropic etching of, for example, twenty-four 6-inch wafers can be achieved in an apparatus that is approximately the same size as a conventional parallel-plate reactor that has a capacity of only three 6-inch wafers.

358095

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