High capacity etching apparatus

Details High capacity etching apparatus High capacity etching apparatus

C - Chemistry, Metallurgy

25

F

204/167

C25F 3/02 (2006.01) C25F 7/00 (2006.01)

Patent

CA 1144517

Lepselt-46 14. HIGH CAPACITY ETCHING APPARATUS Abstract of the Disclosure A high-throughput apparatus for sputter etching or reactive sputter etching or reactive sputter etching of wafers comprises a large-area electrode centrally disposed within a relatively small-area cylindrical electrode. Wafers to be etched are mounted on the inside surface of the cylindrical electrode. A source of r-f power is capacitively coupled to the cylindrical electrode and the center electrode is grounded. By establishing a suitable plasma within the apparatus, simultaneous anisotropic etching of multiple wafers can be achieved.

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