High contrast low metal ion photoresist developing method...

G - Physics – 03 – F

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

96/269

G03F 7/26 (2006.01) G03F 7/32 (2006.01)

Patent

CA 1306138

ABSTRACT HIGH CONTRAST LOW METAL ION PHOTORESIST DEVELOPING METHOD AND COMPOSITION A novel low metal ion developer composition used in a two step process which provides high contrast images and long developer bath life is provided. The process gives high contrast images. The substrate coated with positive photoresist is exposed then immersed in a "predip" bath, rinsed, and then, immersed in the developer bath, rinsed and dried. This process provides high contrast which does not decrease over the life of the developer system. The system consists of 1) a predip solution containing aqueous non-metal ion organic base and a cationic surfactant adjusted to a concentration that does not give development, and 2) a developer solution containing an aqueous solution of an non-metal ion organic base and a flourochemical surfactant adjusted to a concentration that provides development. The high contrast is achieved by the cationic surfactant coating the resist and inhibiting the attack on the unexposed resist by the developer while permitting the developer to dissolve away the exposed resist.

527683

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

High contrast low metal ion photoresist developing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High contrast low metal ion photoresist developing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High contrast low metal ion photoresist developing method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1308062

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.