High-density, high-speed random access read-writer memory

Details High-density, high-speed random access read-writer memory High-density, high-speed random access read-writer memory

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G06F 13/00 (2006.01) G11C 11/34 (2006.01) G11C 11/402 (2006.01) G11C 11/404 (2006.01) G11C 11/409 (2006.01) G11C 11/4093 (2006.01) G11C 11/4094 (2006.01) G11C 11/4096 (2006.01) G11C 11/4099 (2006.01) H03K 19/003 (2006.01)

Patent

CA 1048153

TI-5119 - HIGH DENSITY, HIGH SPEED RANDOM ACCESS READ-WRITERMEMORY ABSTRACT OF THE DISCLOSURE The disclosure relates to a high density, high speed random access memory (RAM) which requires one transistor per bit storage cell. Upon each random bit selection, a row of cells is first selected from the cell matrix from the x address, the information in each selected cell being transferred to a sense amplifier, there being one sense amplifier associated with each column. Each of the bits sent to the sense amplifiers is refreshed and returned to its cell, the bits also being transferred to an input/output and y selection circuit where the information in the selected column is passed to an input/ output buffer under control of the y selection as determined by the y address input to the memory. **********

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