High density memory

Details High density memory High density memory

H - Electricity

01

L

352/82.4

H01L 27/10 (2006.01) H01L 21/762 (2006.01) H01L 21/8242 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1248231

Abstract High Density Memory A memory cell formed in a groove or trench in a semiconductor substrate is provided which includes a storage capacitor located at the bottom and along the lower portion of the sidewalls of the trench, a bit/sense line disposed at the surface of the semiconductor substrate adjacent to the trench, a transfer device or transistor located on the sidewall of the trench between the capacitor and the bit/sense line and a field shield for electrically isolating the storage capacitor from an adjacent cell formed in the same semiconductor substrate.

517130

Affiliated with

Also associated with

Rating

High density memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1209016