High density vertical trench transistor and capacitor memory...

Details High density vertical trench transistor and capacitor memory... High density vertical trench transistor and capacitor memory...

H - Electricity

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356/25

H01L 21/82 (2006.01) H01L 21/334 (2006.01) H01L 21/8242 (2006.01) H01L 29/94 (2006.01)

Patent

CA 1285333

Y0987-020 HIGH DENSITY VERTICAL TRENCH TRANSISTOR AND CAPACITOR MEMORY CELL STRUCTURE AND FABRICATICN METHOD THEREFOR ABSTRACT OF THE DISCLOSURE A semiconductor memory cell structure incorporat- ing a vertical access transistor over a trench storage capacitor including a semiconductor wafer having a semiconductor substrate and an epitaxial layer d1sposed thereon. A relatively deep polysilicon filled trench is disposed in the epitaxial layer and substrate structure, the deep trench having a composite oxide/nitride insulation layer over its vertical and horizontal surfaces to provide a storage capacitor lnsulator. A rela- tively shallow trench is disposed in the epitaxial layer over the deep trench region, the shallow trench having an oxide insulation layer on its vertical and horizontal surfaces thereof. A neck structure of epitaxial polysilicon material extends from the top surface of the polysilicon filled deep trench to the bottom surface of the shallow trench. Impurities are disposed in the epitaxial layer on either side of the shallow trench to form semiconductor device drain junc- tions and polysilicon material is disposed in the shallow trench and over the epitaxial layer to form semiconductor device transfer gate and wordline regions respectively.

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