High density vertically structured memory

Details High density vertically structured memory High density vertically structured memory

G - Physics

11

C

352/82.4

G11C 11/24 (2006.01) G11C 11/34 (2006.01) G11C 11/404 (2006.01) H01L 27/10 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1277031

Abstract HIGH DENSITY VERTICALLY STRUCTURED MEMORY A dynamic random access memory is provided wherein each cell has a storage capacitor and switching device and a bit/sense line or plate located along a sidewall of a trench formed in a semiconductor substrate. In a more particular structure of the cell, the trench width defines the length of the switching device, with the storage capacitor and a highly conductive bit/sense line being formed along opposite sidewalls of the trench. In an array of such cells, the highly conductive bit/sense line or plate interconnecting a large number of the cells of the array extends continuously from cell to cell within the trench at a sidewall thereof. Likewise, the storage capacitors of these many cells have a highly conductive common plate extending continuously within the trench at the opposite sidewall. BU-9-85-004

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