High efficiency gallium arsenide impatt diodes

Details High efficiency gallium arsenide impatt diodes High efficiency gallium arsenide impatt diodes

H - Electricity

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356/56

H01L 29/86 (2006.01) H01L 21/205 (2006.01) H01L 29/864 (2006.01)

Patent

CA 1041672

HIGH EFFICIENCY GALLIUM ARSENIDE IMPATT DIODES Abstract of the Disclosure The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.

239544

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