High efficiency light emitters with reduced...

H - Electricity – 01 – L

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H01L 33/16 (2010.01) H01L 33/32 (2010.01)

Patent

CA 2393044

Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers (2-7) grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in the material compositions of adjacent crystal layers (2-7), grading one or more layers to generate space charges and quasi-fields that oppose polarization- induced charges, incorporating various impurities into the semiconductor that ionize into a charge state opposite to the polarization induced charges, inverting the sequence of charged atomic layers, inverting the growth sequence of n- and p-type layers in the device, employing a multilayer emission system instead of a uniform active region and/or changing the in-plane lattice constant of the material.

Cette invention consiste à réduire, supprimer ou inverser Les champs électriques par polarisation qui se produisent naturellement dans un émetteur de lumière à semi-conducteur avec couches de cristaux (2-7) à croissance en direction polaire, ceci dans le but d'améliorer l'efficacité de fonctionnement de l'émetteur de lumière et le confinement du vecteur. Le procédé utilisé consiste à: réduire les différences de composition entre les couches de cristaux adjacentes (2-7) en agençant une ou plusieurs couches pour générer des charges spatiales et des quasi-champs qui opposent des charges induites par polarisation; incorporer au semi-conducteur diverses impuretés qui s'ionisent dans un état de charge opposé aux charges induites par polarisation; inverser la séquence des couches atomiques chargées; inverser la séquence de croissance des couches de type n et de type p dans le dispositif; utiliser un système d'émission multicouche à la place d'une région uniformément active; et/ou changer la constante du réseau planaire du matériau.

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