H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/072 (2006.01)
Patent
CA 2583504
High efficiency LEDs produced using a direct-bandgap AlGaInNSbAsP material system grown directly on GaP substrates.
L'invention concerne des diodes électroluminescentes à efficacité élevée produites au moyen d'un système de matériau d'AlGaInNSbAsP à structure de bande directe cultivées directement sur des substrats GaP.
Odnoblyudov Vladimir
Tu Charles
Ridout & Maybee Llp
The Regents Of The University Of California
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