High efficiency light-emitting diodes

H - Electricity – 01 – L

Patent

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H01L 31/072 (2006.01)

Patent

CA 2583504

High efficiency LEDs produced using a direct-bandgap AlGaInNSbAsP material system grown directly on GaP substrates.

L'invention concerne des diodes électroluminescentes à efficacité élevée produites au moyen d'un système de matériau d'AlGaInNSbAsP à structure de bande directe cultivées directement sur des substrats GaP.

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