H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/18 (2006.01) H01L 31/0336 (2006.01)
Patent
CA 1207421
ABSTRACT OF THE DISCLOSURE: A process of manufacturing a high-efficiency, stable CdS- Cu2S solar cell using A thick film methodology, which process comprises the steps of: A - preparing a CdS slurry from a dopped, CdS powder; B - depositing a 10-15 µ thick layer of the CdS slurry onto a substrate plated with thin layers of Zn and Cd; C - drying the CdS layered substrate and subjecting it to heat treatment; D pressing the heat-treated substrate; E - subjecting the pressed, CdS layered substrate to another heat treatment to cause CdS recristallisation and annealing; F - forming a thin, barriering layer of CuxS onto the surface of the heat-treated, CdS layered substrate under an inert atmosphere to produce a barriered, CdS-CuxS layered assembly G - subjecting the barriered, CdS-CuxS layered assembly to heat treatment under a H2 atmosphere in the presence of CaO; H - providing an upper conductor onto the upper surface of the heat treated assembly to complete the desired, stable CdS-Cu2S solar cell; and I - encapsulating the obtained cell. This process is advantageous in that it can be carried out with a very simple equipment and sequence of steps, thereby making the overall cost of the resulting solar cells, even when encap- sulated with glass, advantageously comparable with the overall cost involved for the manufacture of the cheapest known silicon- based solar cells.
441034
Kocsis Alexandre
Toth Ottilia F.
Kocsis Alexandre
Robic Robic & Associes/associates
Toth Ottilia F.
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